1. Users would like to know the belows when Reverse bias is applied.
- Enegery band diagram

- QW electron and hole energy states in QW

- Emission Wavelength and intensity in each QW



It is possible to computation of the band diagram and electron/hole QW states. Emission spectrum is a little more complicated question. Of course, at moderated reverse bias, say -1V, there is no electroluminescence at all, because there is no carriers in QWs.

I guess that computation of the emission spectrum will be used to compare simulations with PL or CL measurements. But at high excitation densities emission spectrum depends on the injection level, i.e. on filling QWs with the carriers. And it turns out to be quite a comlicated problem, especially at UV excitation when carriers are generated in all structure (not only in QWs).

We can do simulation of emission spectrum at low excitation densities, when we can use Boltzmann distribution function for the carriers instead of Fermi one. Then spectrum shape depends only on the distance between different energy levels in QWs, but not on the Fermi level position, i.e. excitation level.