The SiLENSe software prompts the user to input the acceptor concentration
and then calculates the hole concentration within the Fermi statistics,
according to the local position of the valence band, Fermi level for holes,
acceptor ionization energy, and temperature (see Sec. 3 of the Physics
Summary). So, incomplete impurity ionization is taken into account. We are
sure it is the right way.

Acceptor concentration and hole concentration are
different because of the high acceptor activation energy (Ea~170meV >>
kT=26meV).

If one know the hole concentration, one can easily adjust the acceptor
concentration for desired hole concentration as follows.

- Start from some acceptor concentration, say 1e19.
- Run computations for zero bias. It is very quick. Look on the hole
concentration in the p-region, far from the p-n junction.
- Correct acceptor concentration and run simulation for zero bias again, and
so on.

In future, we can incorporate in SiLENSe a tool for relating the doping
level and carrier concentration.

Right now, I can suggest to user two variants

1. For each hole concentration find the acceptor concentration as described
above, then run simulations, find IQE.
2. Run simulations with various acceptor concentrations, and from any result
extract both the hole concentration and IQE, then plot IQE vs hole
concentration.