!-V Characteristics에서 paramter 정의
Satuation current density Jo:6E18
Specific Band Gap: 2.5~3.5 for InGaN LED,default:3.4eV
Active Layer Resistance:1E-5
Non-Ideality factor:1.0~2.0, default:1
IQE
Active regrion thickness:Total thickness for all QWs
Radiative recombination rate:2~3E-11
Auger Recombination Coefficient:1~10E-31
Non-Radiative lifetime: 20~100ns, default:80ns
