Infotech Co.
Professionalism based distributor...
전문성을 기반으로 하는 인포테크

Thick n-GaN in SiLENSe

작성자
: 관리자
등록일
: 2023-12-03
조회수
: 368
댓글
: 0
첨부파일

The only comment that the first n-GaN
layer thickness may be specified of about 200-500 nm. Its actual
thickness does not matter. The only effect of thick first layer is a
very small series resistance added.

  돌아가기
S244-ho, 31th floor, A-dong, 323 IncheonTower-daero, Yeonsu-gu, Incheon-si, 22007, Republic of korea
Tel : +82-32-612-8252 / Fax : +82-32-232-0431 / E-mail ; noniess@infotc.co.kr or noniess@naver.com
copyright 2023 infotech, All Rights Reserved.