The Varshni parameter a for InxGa1-xN alloy is computed as follows
a (x) = a_InN*x + a_GaN* (1-x) + a_bowing_InGaN * x * (1-x)
where a_InN and a_GaN are the Varshni parameter for InN and GaN, respectively, and a_bowing_InGaN is the bowing for the Varshni parameter a. The same approach is used for any other mataerial parameters listed in 'Materials Properties' tab (particularly, for Varshni parameter b).
Values fro binary compounds are shown in columns with respective names, and bowing parameters are in columns containing two names of the materials in the end points.
By default, most of parameters (and Vrashni parameters, too) have zero bowing parameters. However, it does not mean that in calculations SiLENSe used zero Varshni parameters for InGaN layers. Zero bowing means only that linear interpolation between the valeus for InN and GaN is used.
