1. in only GaN, user can set up chemical model as GaN_QT and Kinetic.
what is general model and is the difference?

answer:
1. We recommend using GaN kinetic model that accounts for GaN etching with hydrogen. Also, the latest model of particle formation is linked with kinetic model on the surface. The GaN_QT means quasi-thermodynamic model, this model is mostly supported to keep backward compatibility for old users




2. There are a checked particle or an unchecked particle in model option.
if user uses a checked particle, which model is applied? is that "nanocluster"?
and in case of CCS type generally, which option is used? "checked particle" or " unchecked particle"?

answer:
2. If the user activates "particles" model, the model of nanoparticle formation in the gas phase is applied. This process results in material losses in the gas phase, and the losses may be important under some operating conditions, e.g. at elevated pressures. Thus, we recommend to take into account formation of particles in the computations. The computation ignoring this mechanism can be used, for instance, as an initial approximation for further computations to provide better convergence.




3. In set-up of Flange T and Wall T, flange means "shower head"?
and when user set up temperature, actual temperature or coolant temperature?

answer:

3. Flange means showerhead, and we assume the user sets up the actual flange temperature.