in the list of SiLENSe results ‘Jn, Jp, Jn right, Jp left’ are current densities, and their unit is A/cm^2. Their physical meaning is described below.

First of all, Jn is the electron current density in the n-GaN region at the left point of entry. By analogy with this, Jp is hole current density in the p-GaN region (see attached diagram).

Both ‘Jn right’ and ‘Jp left’ are leakage current densities. 'Jn right' is the electron leakage current through the p-GaN region (right) into p-electrode. This current is formed by electrons, which do not take part in the process of recombination. They pass through the structure by means of voltage applied and go out.

Similarly, Jp left is the hole leakage current through the n-GaN region (left) to n-electrode. This current is formed by holes, which do not take part in the process of recombination. They pass through the structure by means of voltage applied and go out.

Injection coefficient describes the impact of the carrier leakage on efficiency.