InGaN 의 Bowing parameter관련한 STR사의 답변과 첨부된 파일 참고하시기 바랍니다.



Please find attached the review cited. Section II.E1 contains discussion on many attempts to determine the InGaN bowing parameters.
The overall range is between 1eV and 3.5 eV, and eventually the authors of the review recommend a value of 1.4 eV, that is slightly higher than the default value used in SiLENSe.

Unfortunately, it seems now most people actually doing LEDs and LDs think in terms of the relation between their own grown parameters and the resulting wavelength, and Indium content they provide in papers is just an estimation (most papers just say "InGaN MQW emitting at ??? nm"). I have seen no recent publications aimed in clarification of InGaN bandgap variation. The reason is that to do it one need

- Be able to grow good InGaN layers with no (low) In composition fluctuations for a considerable In content range
- Be able to measure accurately the In content in these layers
- Have a good model to get relation between the PL spectrum obtained and real bandgap of InGaN layers

Each of the above points is very non-trivial task.


In SiLENSe, the energy gap of InxGa1-xN is calculated as

Eg(InN) * x + Eg(GaN) * (1-x) + b * x * (1-x)

where b is the bowing parameter equal to -1.2 eV in the default database (as shown in your photo).

On the other hand, many authors use an equation with sign "-" for the bowing term, because for most semiconductor alloys the energy gap of an alloy is LOWER than that predicted by a linear approximation.
Then the bandgap is calculated as

Eg(InN) * x + Eg(GaN) * (1-x) - b * x * (1-x)

and b is a positive value.

 

 

BandParameters_III_N.pdf InGaN.jpg