Mg ionization energy in GaN is more or less established and we assume it being 170 meV. And we know no reliable data for Mg
activation in pure InN (may be, an user knows these data). Anyway, the target is not to specify the parameter for InN, but set
such value for InN which will provide reasonable results for InGaN alloys of composition used in heterostructures. As we had no
reliable data for InN, we assume Mg activation energy being independent on Indium content, as a simplest assumption. Users are
welcome to correct material properties according their opinion.
