SiLENSe5.10 버전의 업데이트 내용은 아래와 같습니다.
1. Batch simulation option. Batch simulation option. The key idea is
that SiLENSe can process a text script file (*.slscmd) containing
commands duplicating the most important functionality, namely: (i)
creating, editing, and saving files, (ii) starting computations, and
(iii) exporting of the results into output ASCII files. This option
provides an easy way to made parametric studies with SiLENSe, and also
allows quick change of some parameters for several layers at once (say,
change the dislocation density in all layers just in few clicks).
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2. Custom dependence of the composition profile on the position. Now,
user-defined functions (script functions or tabulated functions) can be
used to specify the composition profile within a layer. So, a complex
composition profile of QWs and barriers can be specified with no need to
"slice" complex profile into many thin layers. The same option can be
used for the relaxed lattice constant.
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3. Import of composition profile from STREEM output files. Tabulated
layer composition from STREEM is converted into a tabulated function,
and then this function is used for the layer composition (see previous
paragraph). Computed relaxed lattice constant a is imported from STREEM
file and used to calculate the strain and, eventually, the piezoelectric
polarization. After import of STREEM file one needs manually specify all
other input layer parameters which are not considered in STREEM -
doping, lifetimes, etc.
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4. Self-consistent account for the stimulated recombination in the
drift-diffusion model for simulation of laser diodes. It is a
remarkably improvement of the model, allowing prediction of the laser
operation above the threshold, while previous versions only extrapolated
the output power from the differential efficiency calculated at
threshold conditions.
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5. Convergence of PL computations has been improved, and some minor
improvements has been made, and some minor errors has been fixed (none
of these errors lead to wrong simulation results).
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6. Additional comments on SiLENSe/SpeCLED combination. This year (2015),
we have developed a model which allows add surface recombination into
the framework of SpeCLED. Briefly, the approach looks as following.
- From SiLENSe simulation of the heterostructure, the sheet carrier
concentration of electrons and holes in the active region is
tabulated as a function of the p-n junction bias and imported into
SpeCLED in addition to the current density, IQE, and emission
wavelength. If one prefer manually specify the active region
characteristics in SpeCLED, one can also specify manually the
carrier concentration.
- Main SpeCLED computation is done as usual.
- After the end of main SpeCLED computation, the problem of lateral
ambipolar carrier diffusion in the active region is solved numerically.
The driving forces for the diffusion are (i) surface recombination at
the sidewalls and (ii) non-uniformity of the carrier concentration in
the active region. The main parameters are the ambipolar diffusion
coefficient and surface recombination coefficient. These parameters are
specified in SpeCLED.
- As the corrected distribution of the carrier concentration is
obtained, the current density converted into the recombination,
IQE, and light generation are calculated basing on the known carrier
concentration and the tabulated data on the active region
characteristics.
- Eventually, simulation provide (i) the current converted into the
surface recombination, (ii) corrected EQE and WPE, and (iii) corrected
lateral distribution of the carrier concentration, IQE, light
generation, and so on.
On IWN-2015 conference, we have reported this model applied to Osram UX3
chip. Please find attached the abstract and poster.
