아래 2" UV LED epiwafer 스펙이고 3장이상 구매 가능합니다.

DUV 경우는 SMD/COB/UNIT 형태의 공급이 가능합니다.

문의사항 있으시면 연락 주십시오

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n-GaN/p-GaN/u-GaN Wafer

We are supplying n-GaN, p-GaN, u-GaN which are produced with epitaxial growth using our proprietary technology.

For your future request, we are offering other designed GaN.wafer, InGaN and AlGaN.
Please contact us to discuss wafer specifications in detail.

SPECIFICATIONS

Epi wafer diameter	2 inch
Epi layer	GaN
Thickness of GaN epilayer	2-10
Structure of GaN epilayer	Wurtzite
Orientation of GaN layer	(0001)
Conductivity	N-type P-type undoped-type
Surface	as grown
Substrate	Sapphire
Substrate orientation	(0001) on-axis

*No buffer layer is required.

UV LED Wafer

 We start to provide UV LED wafers which are produced with epitaxial growth using our proprietary technology.

The products line-up of UV LED wafers are 355nm, 360nm, 365nm, 370nm, 375nm.
Those UV LED wafers are producesd using our original designed MOCVD at our own factory in Japan. We also provide UV LED chips (die) and UV LED lamps which are made from our UV LED wafers. We are offering other epitaxial wafers to meet your needs.
Please contact us to discuss wafer specifications including other wavelength, size, layer thickness, and epitaxial design.

 UV LED Wafer

*Optical output power is depend on how to process. The above shows Optical output power of bare chip ( IF=20mA ) if it is processed by us.

 The basic design of epitaxial wafer