기존의 1.3.98에서 1.3.115로 upgrade되었습니다.
내용은 아래와 같습니다.
The most significant change is the new model of GaN growth. It have been
revised to provide a better fit to experimental data at high pressures in
multiwafer reactors.
The model revisions are:
- kinetic model of surface processes, accounting for GaN etching by
hydrogen, has been introduced;
- changes in the volume reaction (DMGa species has been added) and
particle formation mechanisms, coupled with the kinetic model. This means
that the previuos (QT) and kinetic models utilize different gas-phase
reaction mechanisms.
The user can choose between the QT (GaN_QT) and kinetic (GaN_Kinetic)
models on the Flow Rates tab of the GUI.
Other significant changes:
- Averaged growth rate is replaced with substrate/satellite center growth
rate on the Profiles tab for instant profile.
