1. Dislocation effect on Light Emission efficiecy in GaN
2. The effect of Si doping in selected barrier on the electroluminescence of InGaN/GaN MQW LED
3. Carrier Distribution in (0001) InGaN/GaN MQW LED
4. Simulation of V and UV III-N LED
5. Theorical study of current overflow in GaN based LED with superlattice cladding layers
6. Designe and simulation of ZnO based LED structures
7. Segregation effcts and bandgap engineering in InGaN QW heterostructures
8. Hybrid ZnO/III-N LED: modelling analysis of operation
9. Modeling study of MQW LED operation
10. Current spreading and thermal effects in blue LED dice
11. Current Spreading, Heat transfer and light extraction in multi-pixel array
12. Bandgap engineering of electronic and optoelectronics devices on native AlN and GaN substrate
13. Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers
14. Carrier injection and light emission in visible and UV nitride LEDs by modeling
15. Heterojunctions between III-N short-period superlattics
16. Auger recombination responsible for the efficiency rollover in III-N LED
17. ZnO epilayers on GaN templates: polarity control and valence-band offset
18. Fabrication and characterization of n-ZnO/p-AlGaN heterojunction LED on 6H-SiC substrates
19. Polarization Effects in Heterojunction band offset measurements of the ZnO-GaN interface
20. Structure and electronic properties of the polar ZnO-GaN(0001)