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PolySim™ is a powerful tool for design and optimization of reactors for polycrystalline silicon deposition from chlorosilanes by Siemens process.

PolySim™ Features
PolySim™ incorporates quasi-stationary 1D approximation model of polycrystalline silicon deposition from chlorosilanes in the Siemens process.

PolySim™ provides simulation of the following phenomena:
Radiative heat transfer in the reactor. The rods are assumed to be uniformly distributed in the reactor, and averaged radiative heat transfer from all the rods is computed.
Heat transfer and gas mixture flow including multi-component diffusion. Heat conductivity and species diffusivities in 1-D boundary layer are calculated in terms of molecular kinetic theory. The diffusion of reactive species is modeled using the Wilke approximation.
Gas-phase chemistry. Modeling of gas-phase chemical reactions involving decomposition of the precursors and further reaction pathways.
Surface chemistry. Modeling of surface chemistry accounting for chemically reactive surfaces of the growing polysilicon. A quasi-equilibrium model is used to describe the mass exchange between the vapor and solid surface.