SiLENSe2.60에서 4.0 버젼으로 업그레이드 되었습니다.

추가된 기능은 아래와 같습니다.


1. Release Notes 4.0
This section describes new options in version 4.0 compared to version 3.60:
? Simulation of nonpolar and semipolar orientations. The user can choose the orientation in the respective combo box in the ‘Heterostructure’ tab. To calculate the piezoelectric fields in semipolar structures, new material ptoperties were introduced: lattice constant c, piezoelectric constant e15, and stiffness constants C11, C12, and C44.
NB! It is strongly recommended to add new material properties in the files created be earlier versions, use ‘Material Properties->Import’ menu item and choosing default database supplied with the current version of the software.
‘Substrate’ section is removed from the ‘Heterostructure’ tab. Instead, the user should indicate if the first heterostructure layer is strained1. If yes, one should specify its lattice constants a and c. The option of input of the substrate lattice constant by composition is removed. By default, all files newly created or converted from older versions are assumed to have relaxed first layer. If you see a warning about the lattice constant specification during opening old project file, please check the input data in the ‘Strain in the first layer’ section in the center of the ‘Heterostructure’ tab.
? Changes in the user interface:
Export of plots to graphic files (*.bmp, *.wmf, and *.emf) is available by ‘Export->Save current chart’ menu item.
Visualization of the layer properties (doping, mobility, dislocation density, carrier lifetimes, etc) in the bottom chart of the ‘Heterostructure’ window.
Two solver parameters are made read-only: ‘Potential solver parameter’ and ‘Fermi level solver parameter’.

First layer appearing in the heterostructure list is a thick n-type layer, usually made of GaN. Typically, it is not strained. The user need not input the nucleation and buffer layers in the heterostructure list