============= Improvements ===========================================
SiLENSe:
- More than one periodic structure.
- Output of contribution of each pair of electron/hole energy levels.
- Editing some parameter for many layers at once.
- Computation of the band diagram, energy levels, and PL spectrum shape at
reverse bias. However, software will not compute the reverse current because
it is governed by the carrier transport mechanisms beyond the SiLENSe model.
- Improvement of all plots in terms of scaling, tick labels, and so on.
- Collection of the material data and making examples for conventional III-V
LEDs and LDs.

SpeCLED:

- Support of semiconductor material for substrate.
- Support of material with fixed electrical conductivity for n- and p-
semiconductor layers.
- More models for the contact resistance between p-GaN and ITO including (i)
constant resistance, (ii) present non-linear model, and (iii) user-defined
model like functions for material properties.
- We will clarify the captions and names of parameters throughout the whole
user interface to make GUI more clear and self-explanatory. Particularly,
users are often confused by a lot of similar names like 'p-contact layer',
'p-electrode', 'p-pad', and 'p-pad contact'. We should use more clear names
here.

RATRO
- 'Mirror' and 'Multiple layer' surface models will be available for any of
chip surface listed in 'Surface Properties' list.
- 'Multiple layer' model will include options for repeating layers in order
simulate DBRs.

============= New directions ================================
SiLENSe:
- Improvement of carrier transport model to resolve issues with deep
MQW structures.

Packaging:
- We have started development a module for simulation of the heat transfer
and light propagation in the scale of the whole package. Within few days, I
will send you updated SimuLED brochure with info and some screenshots of
this module.