p-side down구조의 적용, 첨부 파일 참고
> 5. The present version growth direction( substrate?n?p), needs this option (substrate?p?n)
> *5. The current version of SiLENSe**can not hold "substrate->p->n" growth sequence ONLY if the user wants to specify partial layer
> relaxation. _Otherwise, it can work. One needs just specify the structure from n to p and to p-substrate and also choose the
> crystal orientation to the direction in the "__Heterostructure__" tab opposite to real one_.*
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For ZnO, direction of [0001] axis is similar to GaN if we do the following replacement: Zn <-> Ga, O <-> N . Keeping in mind this
replacement, the user needs draw his structure as it was done in the slide I sent you, mark n-side and p-side, determine the
direction from n-side to p-side, and specify this direction in SiLENSe.
