1. The physical meaning is that a larger correction factor corresponds to a more smooth quantum potential. Zero correction factor
means that quantum potential is equal to the band edge (no change in the result). Default parameters were chosen from two
independent validation procedures described in the document "SiLENSe_Quantum_Potential.pdf".

- Slide 8 - Comparison of the tunneling current through a potential barrier with the ballistic current (no tunneling) through a
modified barrier. The correction factor is chosen to bring results with classical transport and quantum potential to computations
for tunneling made for some test barrier shape (triangular).

- Comparison of the minimum of the quantum potential and the ground energy level obtained from the Schrodinger equation for the
initial potential. Pictorial description of this is shown in Slide 6.

2. I understand that it is impossible to measure mobility in a thin layers used in the heterostructure. Generally, the carrier
mobility depends on MANY factors, i.e. it is inhibited by many scattering mechanisms. Below, I will list the most important.

- Doping level. Scattering on the charged impurities. One should note that in nominally undoped layers there is some background
n-type doping.
- Carrier concentration. Increase of the carrier concentration lowers impurity scattering due to the screening. On the other hand,
some other mechanisms may become more pronounced. In HEMTS, some optimum concentration is predicted which depends on many parameters.
- Temperature, i.e. phonon scattering.
- Composition. Mobility in the alloys is always lower than that of the pure material , because of random distribution of metal
atoms in group-III sublattice.
- Composition fluctuations, interface roughness, etc.

There are some literature data on mobility dependence on particular factors. Some collection of the essential plots can be found here

http://www.ioffe.ru/SVA/NSM/Semicond/GaN/hall.html

Also, Debdeep Jena with colleagues published many papers on theoretical analysis of the electron mobility in HEMTs, with detailed
estimations for each scattering mechanism.

So, my recommendation is to set up mobility basing on understanding the above mechanisms and the common sense. Fortunately,
SiLENSe results does not dramatically depend on the carrier mobility. My feeling is that accuracy of 2-3 times is acceptable. And
BESST can not help because in BESST the user manually specified the scattering time (i.e. the mobility for the bulk).